发明名称 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a semiconductor, capable of suppressing deterioration of yield by suppressing wafer jumping or breaking due to warping by thermal stress, in a MSA process. SOLUTION: A supporting member 15 for supporting a wafer w is arranged on a stage 14. An upper end of the supporting member 15 is adjusted at a height where the wafer w is detached from the stage 14 when warping of the wafer w under a predetermined condition becomes maximum. The wafer w is supported at the upper end of the supporting member 15. The wafer w is annealed by using a lamp 12 under a predetermined condition. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009177062(A) 申请公布日期 2009.08.06
申请号 JP20080016206 申请日期 2008.01.28
申请人 TOSHIBA CORP 发明人 FUKUMOTO MASATO;KANEKO HISAFUMI
分类号 H01L21/26;H01L21/683 主分类号 H01L21/26
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