| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including, in an area under a channel region, a crystal layer for generating distortion to improve charge mobility in a channel region and controlling formation of a leak current route. SOLUTION: The semiconductor device includes a semiconductor substrate 1, a first semiconductor crystal layer 14 formed on the semiconductor substrate, a gate electrode 13 formed on the first semiconductor crystal layer via a gate insulating film 11, a channel region 15 formed in the region under the gate insulating film within the first semiconductor crystal layer, a source/drain region 16 formed in the regions holding the channel region within the first semiconductor crystal layer, a second semiconductor crystal layer formed between the semiconductor substrate and the channel region and is formed of a crystal material having the lattice constant larger than that of the crystal constituting the first semiconductor crystal layer, and an embedded insulating layer 18 formed holding the second semiconductor crystal layer 17 between the semiconductor substrate and the first semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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