| 摘要 |
PROBLEM TO BE SOLVED: To attain miniaturization of a sensor, while suppressing variation of the offset voltage, after the power is turned on. SOLUTION: A dielectric film 5 is formed on the surface of an SOI semiconductor substrate 3 surface, including the surfaces of piezoresistance elements R1-R8 and diffusion lead wires L1-L12. An electrical conductor film 6 is formed on the surface of the dielectric film 5, which corresponds to the surface of a diaphragm 2 and to the surfaces of the diffusion wires L1-L12. The electrical conductor film 6 is connected to a terminal Vdd for applying bias voltage in a region X. COPYRIGHT: (C)2009,JPO&INPIT
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