发明名称 PLASMA PROCESSING APPARATUS
摘要 Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.
申请公布号 US2009194238(A1) 申请公布日期 2009.08.06
申请号 US20090361066 申请日期 2009.01.28
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIBASHI KIYOTAKA;NOZAWA TOSHIHISA;NISHIMOTO SHINYA;KOMOTO SHINJI
分类号 C23F1/08;C23C16/54 主分类号 C23F1/08
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