发明名称 HEAT DISSIPATION STRUCTURE OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a heat dissipation structure of a semiconductor element which has good heat dissipation effects against heat generated from the semiconductor element, has high heat generation density and can support a flip-chip connection of the semiconductor element where heat generating regions are concentrated. SOLUTION: The heat dissipation structure of the semiconductor element has a heat dissipating board connected to the semiconductor element. The element includes a first heat dissipating bump 2 for dissipating the heat. The heat dissipating board comprises a multilayer ceramic substrate 6 including a plurality of layered ceramic substrates 6a, 6b, 6c and 6d. The structure includes a front layer heat dissipation part provided on the front layer of the ceramic substrates 6a, 6b, 6c and 6d, and inner layer heat dissipation parts provided among the substrates 6a, 6b, 6c and 6d, and thermal vias 8 for connecting the front layer heat dissipation part with the inner layer heat dissipation parts. The multilayer ceramic substrate 6 and the semiconductor element are flip-chip connected via the first heat dissipating bump 2 and the front layer heat dissipation part. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009176839(A) 申请公布日期 2009.08.06
申请号 JP20080011939 申请日期 2008.01.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKANO JIHEI
分类号 H01L23/12;H01L21/60;H01L23/34 主分类号 H01L23/12
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