SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes an SiC substrate (101) of a first conductivity type or a second-conductivity type, an SiC layer (102) of the first conductivity type formed on a first main surface of the SiC substrate (101), a first SiC region (103) of the second conductivity type formed on a surface of the SiC layer (102), a second SiC region (104) of the first conductivity type formed within a surface of the first SiC region (103), a gate dielectric (105) continuously formed on the SiC layer (102), the second SiC region (104), and the surface of the first SiC region (103) interposed between the SiC layer (102) and the second SiC region (104), a gate electrode (106) formed on the gate dielectric (105), a first electrode (108) embedded in a trench selectively formed in a part where the first SiC region (103) adjoins the second SiC region (104), and a second electrode (107) formed on a second main surface of the SiC substrate (101).