| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. <P>SOLUTION: The apparatus for manufacturing a semiconductor single crystal ingot comprises a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for applying a horizontal magnetic field to the semiconductor melt, forming an MGP (Maximum Gauss Plane) in a location of ML-100 mm to ML-350 mm based on a ML (Melt Level) of the surface of the semiconductor melt and applying a strong magnetic field of 3,000 to 5,500 Gauss to the intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1,500 to 3,000 Gauss below the solid-liquid interface. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
