| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film epitaxial wafer by simply suppressing and controlling auto-doping of impurities from a heavily doped underlying silicon wafer. SOLUTION: On the major surface of an underlying silicon wafer to which arsenic, phosphorus or boron is added at a dopant concentration of 1×10<SP>19</SP>/cm<SP>3</SP>, a silicon epitaxial layer is grown by low pressure vapor phase epitaxy at a deposition temperature in the range of 1,000-1,100°C in a reactor of deposition gas containing SiH<SB>4</SB>gas under a pressure in the range of 1999.83 Pa (15 Torr)-2666.44 Pa (20 Torr). A single wafer vapor phase epitaxial growth system is employed in this vapor phase epitaxy, the underlying silicon wafer is brought into a state for rotating horizontally in a reaction chamber, and deposition gas is suitably made to flow down onto the major surface of an underlying silicon wafer from above. COPYRIGHT: (C)2009,JPO&INPIT
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