发明名称 Interconnect structure and method of fabricating the same
摘要 A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
申请公布号 US2009197113(A1) 申请公布日期 2009.08.06
申请号 US20080229233 申请日期 2008.08.20
申请人 NATIONAL TSING HUA UNIVERSITY 发明人 WU YU-TSUNG;HUANG JEN-HONG;TSAI CHUNG-MIN;SU HUAN-CHIEH;YEW TRI-RUNG
分类号 H01L21/70 主分类号 H01L21/70
代理机构 代理人
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