发明名称 |
NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME |
摘要 |
A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell.
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申请公布号 |
US2009194839(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
US20080273807 |
申请日期 |
2008.11.19 |
申请人 |
BERTIN CLAUDE L;GHENCIU ELIODOR G;RUECKES THOMAS;MANNING H M |
发明人 |
BERTIN CLAUDE L.;GHENCIU ELIODOR G.;RUECKES THOMAS;MANNING H. M. |
分类号 |
H01L29/06;H01L21/20 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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