发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
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申请公布号 |
US2009194792(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
US20090413010 |
申请日期 |
2009.03.27 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KONISHI SATORU;ENDO TSUNEO;NAKAJIMA HIROKAZU;UMEMOTO YASUNARI;SASAKI SATOSHI;KUSANO CHUSHIRO;IMAMURA YOSHINORI;KUROKAWA ATSUSHI |
分类号 |
H01L21/28;H01L27/082;H01L21/331;H01L21/8222;H01L21/84;H01L23/34;H01L23/482;H01L23/498;H01L25/065;H01L25/07;H01L25/16;H01L25/18;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/737;H01L29/739;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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