发明名称 |
THIN FILM TRANSISTOR USING AN OXIDE SEMICONDUCTOR AND DISPLAY |
摘要 |
A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less. |
申请公布号 |
WO2009096608(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
WO2009JP52013 |
申请日期 |
2009.01.30 |
申请人 |
CANON KABUSHIKI KAISHA;GOYAL, AMITA;ITAGAKI, NAHO;IWASAKI, TATSUYA |
发明人 |
GOYAL, AMITA;ITAGAKI, NAHO;IWASAKI, TATSUYA |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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