| 摘要 |
A method of manufacturing a semiconductor device including at leasty one of the following steps: sequentially forming a first oxide layer, a nitride layer, a second oxide layer, a bottom anti-reflect coating and a photo-resist pattern over a semiconductor substrate; exposing the uppermost surface of the semiconductor substrate by performing a first reactive ion etch process; and then forming a trench in the uppermost surface of the semiconductor substrate by performing a second reactive ion etch process.
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