发明名称 |
STRAINED CHANNEL TRANSISTOR STRUCTURE AND METHOD |
摘要 |
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
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申请公布号 |
US2009194788(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
US20080025788 |
申请日期 |
2008.02.05 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
LIU JIN PING;SEE ALEX KH;ZHOU MEI SHENG;HSIA LIANG CHOO |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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