| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a large number of semiconductor elements are formed in a two-dimensional manner and which prevents peeling-off of a wire-bonding metal. <P>SOLUTION: A mask 11 for selective growth is formed on a substrate 1 for growth. An AlN buffer layer 2 is formed in a region where a part of the mask 11 for selective growth is removed. An undoped GaN layer 3, an n-type GaN layer 4, an active layer 5, and a p-type GaN layer 6 are laminated in turn on the AlN buffer layer 2. A bonding metal 13 and an electrode are connected with each other via a contact hole of an insulating film 12. The bonding metal 13 is continuously formed over the surfaces of at least two or more semiconductor elements adjacent to each other. <P>COPYRIGHT: (C)2009,JPO&INPIT |
