| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which external defects such as cracks, flaws and chips are reduced, and to manufacture a semiconductor device having a thin substrate and reducing the volume of the device mounting a manufactured element, at high yield. <P>SOLUTION: A semiconductor element is formed on a first surface of a substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side face of the substrate. Steps are formed on the side faces of the substrate. The width of the anterior section of the substrate in relation to steps is narrower than the posterior section of the substrate in relation to the steps. Therefore, the cross-section of the substrate has a T letter shape. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
