METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of not only suppressing a punch-through current but also reusing a silicon wafer for pasting in manufacturing the semiconductor device using an SOI technique; and to provide its manufacturing method. SOLUTION: A channel region is formed using a laminate of semiconductor films obtained by: injecting impurities 109, 112 of conductivity type opposite to that of source region and drain region into a semiconductor film 107 pasted to a substrate 106 separated from a silicon wafer 101; and joining a single crystal semiconductor film 114 thereonto. COPYRIGHT: (C)2009,JPO&INPIT