| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein a p-isolation diffusion layer is formed on a sidewall of a semiconductor chip, capable of manufacturing a reverse-blocking device having high performance device characteristics and high long-term reliability at low cost and with a short lead time and a high yield. <P>SOLUTION: A wafer 100 is applied to a dicing tape 3, and then the wafer 100 is diced to make chips. While applying an IGBT chip 12 to the dicing tape 3, ions are implanted into dicing lines 13, and laser annealing is performed as it is, to form the p-isolation diffusion layer 3 on a side surface of the IGBT chip 12. Since it does not pass through thermal hysteresis such as long diffusion in forming the p-isolation diffusion layer 63, the reverse-blocking device having high performance device characteristics and high long-term reliability can be manufactured at low cost with a short lead time and a high yield. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
