| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of further improving the switching tolerance of an IGBT element owned by the semiconductor device. <P>SOLUTION: The semiconductor device 1 includes: a plurality of trench gate type IGBT elements having an emitter electrode 106 and a gate electrode 104 formed on an upper surface Su of a semiconductor substrate 101 and a collector electrode 108 formed on the entire lower surface Sd of the semiconductor substrate 101 on an active region Dd; and a guard ring 110 for applying a predetermined voltage between the emitter electrode 106 and the collector electrode 108 on a voltage withstand region Dr. Further, in the semiconductor device 1, an end 107a of the collector layer 107 is positioned immediately below the IGBT element on the outermost of the active region Dd out of the plurality of IGBT elements, i.e. on the active region Dd side by a distance L1 from a boundary B between the active region Dd and the voltage withstand region Dr. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
