| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase-change memory device; and a method of fabricating the same. SOLUTION: By using germanium-antimony-tellurium-based Ge<SB>2</SB>Sb<SB>2+x</SB>Te<SB>5</SB>(0.12≤x≤0.32) in a phase-change material layer of this phase-change memory element, the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition process between crystalline and amorphous states of a phase change material, and the phase transition due to rising of temperature is directly directed to a single-phase crystalline state of a stable phase from the amorphous state. Thereby, set operation stability and distribution characteristics of set state resistance values of the phase-change memory element can be significantly improved. By using Ge<SB>2</SB>Sb<SB>2+x</SB>Te<SB>5</SB>(0.12≤x≤0.32) for the phase-change material layer of the phase-change memory element, a resistance value in the amorphous state can be maintained for a long time at a high temperature around crystallization temperature, and thereby reset operation safety and safety in a repetitive recording operation process of the phase-change memory element can be significantly improved. COPYRIGHT: (C)2009,JPO&INPIT
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