| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element capable of preventing element destruction, and formed of a group III nitride semiconductor; and a method for manufacturing the same. SOLUTION: This nitride semiconductor element includes: a nitride semiconductor lamination structure portion 2 including an n- type layer 3, and a p-type layer 4. In the nitride semiconductor lamination structure portion 2, a trench 5 is formed. Peripheral regions of the trench 5 expanding in the width direction from upper parts of wall surfaces 8 of the trench 5 are n+ type regions 6. A region other than the n+ type regions 6 in the p-type layer 4 is a body region 7. A gate insulation film 9 is formed on the uppermost surface 21 of the p-type layer 4 by covering the whole area of the wall surface 8. In the body regions 7 exposed from openings 13 of the gate insulation film 9, electrodes 15 for bodies are formed. In the n+ regions 6 exposed from the openings 12 of the gate insulation film 9, source electrodes 14 are formed. A drain electrode 16 is formed on the other-side surface of a substrate 1 in contact with it. COPYRIGHT: (C)2009,JPO&INPIT
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