| 摘要 |
PROBLEM TO BE SOLVED: To provide a means of stably detecting the intensity of light in the ultraviolet range. SOLUTION: Disclosed is a lateral PN junction type photodiode, wherein a P-type high-density diffusion layer in which a P-type impurity is diffused to high density and an N-type high-density diffusion layer in which an N-type impurity is diffused to high density are disposed opposite each other across an interposed low-density diffusion layer formed by diffusing an impurity of one of a P-type and an N-type in the silicon semiconductor layer to low density, the P-type high-density diffusion layer and N-type high-density diffusion layer being formed in the silicon semiconductor layer. An interlayer dielectric is formed on the silicon semiconductor layer, and covalent bonding of silicon and hydrogen is formed in an atom series adjacent to an interface of the low-density diffusion layer for the interlayer dielectric. COPYRIGHT: (C)2009,JPO&INPIT
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