发明名称 |
SEMICONDUCTOR DEVICE HAVING SOI STRUCTURE |
摘要 |
A plurality of conductive layers and a plurality of wiring layers connecting a supporting substrate having SOI structure and uppermost wire are formed along a peripheral part of a semiconductor chip together with the uppermost wire, to thereby surround a transistor forming region in which a transistor is to be formed. |
申请公布号 |
US2009194877(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
US20090399062 |
申请日期 |
2009.03.06 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MAKI YUKIO;IPPOSHI TAKASHI;IWAMATSU TOSHIAKI |
分类号 |
H01L23/532;H01L21/84;H01L27/12 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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