发明名称 COMPONENT FOR SUBSTRATE TREATING APPARATUS AND METHOD FOR FORMING FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a component for a substrate treating apparatus in which the production of particles caused by the breakage of an alumite film is surely prevented. <P>SOLUTION: A cooling plate 36 of the component for the substrate treating apparatus 10 for applying plasma on a wafer W includes an aluminum base material 56 consisting essentially of an alloy containing silicon in aluminum and the alumite coating film 57 formed on the surface of the aluminum base material 56 by connecting the cooling plate 36 to an anode of a power source and dipping into a solution consisting essentially of oxalic acid to carry out an anodizing treatment. The alumite coating film 57 is impregnated with ethyl silicate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009173965(A) 申请公布日期 2009.08.06
申请号 JP20080011372 申请日期 2008.01.22
申请人 TOKYO ELECTRON LTD 发明人 MIHASHI YASUSHI
分类号 C25D11/18;C25D11/04;C25D11/10;H01L21/205;H01L21/3065 主分类号 C25D11/18
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