| 摘要 |
PROBLEM TO BE SOLVED: To improve high frequency characteristics for stable high frequency performance, by reducing leak current and current collapse by deactivating piezoelectric charge to obtain a semiconductor layer of high resistance. SOLUTION: A semiconductor device comprises a substrate 10, a nitride compound semiconductor layer 14 which, having been doped with a first transition metal atom, is arranged on the substrate, an aluminum nitride gallium layer (Al<SB>x</SB>Ga<SB>1-x</SB>N)(0.1≤x≤1)16 arranged on the nitride compound semiconductor layer 14, a nitride compound semiconductor layer 18 which, having been doped with a second transition metal atom, is arranged on the aluminum nitride gallium layer (Al<SB>x</SB>Ga<SB>1-x</SB>N)(0.1≤x≤1)16, an aluminum nitride gallium layer (Al<SB>y</SB>Ga<SB>1-y</SB>N)(0.1≤y≤1)22 arranged on the nitride compound semiconductor layer 18 having been doped with the second transition metal atom, and a gate electrode 26, source electrode 24, and drain electrode 28 arranged on the aluminum nitride gallium layer (Al<SB>y</SB>Ga<SB>1-y</SB>N)(0.1≤y≤1)22. COPYRIGHT: (C)2009,JPO&INPIT
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