METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving a manufacturing yield of the semiconductor device, and reducing variations in characteristics of the semiconductor devices. SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming a first ion implantation mask on the surface of a semiconductor having irregularity; forming a second ion implantation mask on a surface of the first ion implantation mask; forming photoresist on a surface of the second ion implantation mask; removing a part of the photoresist to expose the surface of the second ion implantation mask; exposing the surface of the first ion implantation mask by removing the exposed part of the second ion implantation mask by etching; and removing an etching residual part remaining on the exposed part of the first ion implantation mask by etching after a first etching process. COPYRIGHT: (C)2009,JPO&INPIT