发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING HETEROJUNCTION |
摘要 |
A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light. |
申请公布号 |
WO2009095886(A2) |
申请公布日期 |
2009.08.06 |
申请号 |
WO2009IB50378 |
申请日期 |
2009.01.30 |
申请人 |
INSIAVA (PTY) LIMITED;SNYMAN, LUKAS, WILLEM;DU PLESSIS, MONUKO |
发明人 |
SNYMAN, LUKAS, WILLEM;DU PLESSIS, MONUKO |
分类号 |
H01L33/00;H01L33/02;H01L33/34 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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