| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition having sufficient sensitivity and a resolution in a micro photo fabrication using a far ultra-violet ray, especially an ArF excimer laser light with a wavelength of 193 nm, and obtaining excellent resolution and a pattern profile even if a long time period elapses before heating a workpiece after an exposure, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition contains: a resin having an iteration structural unit of a particular structure, and increasing a dissolution speed to an alkali liquid developer by an action of an acid; a particular sulfonium salt compound for generating a sulfone acid having a straight-chain alkyl group whose carbon number is 2 or more and is fluorine-substituted by irradiation with an active light beam or a radiation; and fluorine based and/or silicon based surfactant. The pattern forming method uses the same composition. <P>COPYRIGHT: (C)2009,JPO&INPIT |
