METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN-based semiconductor device which is capable of lowering its operation voltage while making productivity improvements and reducing manufacturing costs by manufacturing a p-type GaN-based semiconductor without performing additional heat treatment process after the lamination process a semiconductor layer is completed.

SOLUTION: As the uppermost layer of a lamination structure of a GaN-based semiconductor to be formed on a substrate, a p-type contact layer composed of AlGaN is formed by a MOVPE method, and then the falling temperature of the p-type contact layer is carried out while ammonia and an inert gas with respect to the GaN semiconductor are introduced into a growing furnace so that the ratio of ammonia becomes 0 to 0.025.

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