发明名称 ELECTRON BEAM IRRADIATION DEVICE, AND ELECTRON BEAM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To sufficiently reduce the generation rate of abnormal discharge between a cathode and an anode. SOLUTION: This invention relates to an electron beam irradiation device 6 for an electron beam deposition apparatus provided with: a cathode 22 emitting thermoelectrons; a grid 23, in a state where thermoelectrons are emitted from the cathode 22, emitting electrons by an amount in accordance with the voltage value of grid voltage applied to a space with the cathode 22; an anode 24 applied with anode voltage in a space with the cathode 22, so as to accelerate the electrons; and a focusing part 25 focusing the accelerated electrons, so as to generate electron beams EB. The anode 24 is composed in such a manner that a flange part (sword-shaped part) 24a oppositely arranged to the cathode 22 and a cylindrical part 24b guiding the thermoelectrons toward the focusing part 25 are integrally formed, and further, it is subjected to shot blasting in such a manner that the arithmetic average roughness Ra of one side 24s on the side of the cathode 22 in the flange part 24a lies in the range of 2.0 to 7.3μm. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009173953(A) 申请公布日期 2009.08.06
申请号 JP20080010588 申请日期 2008.01.21
申请人 TDK CORP 发明人 TANABE YOSHIHIKO;YARIMIZU SEIJI;EMORI YASUHIKO
分类号 C23C14/30;G11B5/85;H01J37/065 主分类号 C23C14/30
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