| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal nitride film, and an apparatus and a method for manufacturing the metal nitride film. SOLUTION: In the metal nitride film manufacturing method, a precursor 17 consisting of tantalum chloride gas is generated by etching a tantalum-formed member 14 to be etched inside a chamber 1 in which a substrate 3 is loaded and stored on a supporting stand 2; the temperature of the substrate 3 is set to be lower than that of the etched member 14; the precursor 17 is adsorbed by the substrate 3; the precursor 17 adsorbed by chlorine gas plasma is reduced to deposit the tantalum component on the substrate 3; and during this operation, the tantalum component is nitrided by nitrogen gas plasma obtained by converting nitrogen gas into plasma; and a metal nitride film 18 is deposited on the substrate 3. The flow rate ratio of nitrogen gas/halogen gas is set to be >0 and≤0.1 by controlling the supply of nitrogen gas, and the N/M ratio which is the atomic composition ratio of nitrogen atoms to metal atoms of the nitrogen metal film 18 is set to be >0 and≤1. COPYRIGHT: (C)2009,JPO&INPIT
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