发明名称 METHOD FOR FORMING SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film capable of suppressing a decrease in mobility by heating and deterioration of characteristics and capable of obtaining a semiconductor thin film for improving heat resistance with a simple procedure. SOLUTION: A solution, where a plurality of kinds of organic materials, including an organic semiconductor material are mixed, is applied or printed on a substrate and a thin film is formed. Then, a plurality of kinds of organic materials are phase-separated in a step of drying the thin film. Thus, a semiconductor thin film 1 having a lamination structure wherein an intermediate layer (b) composed of an organic insulating material is sandwiched between two semiconductor layers a, a' is obtained. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009177136(A) 申请公布日期 2009.08.06
申请号 JP20080287250 申请日期 2008.11.10
申请人 SONY CORP 发明人 OE TAKAHIRO;KIMISHIMA MIKI
分类号 H01L21/368;H01L21/336;H01L29/786;H01L51/05;H01L51/40;H01L51/50 主分类号 H01L21/368
代理机构 代理人
主权项
地址