PRESSURE SENSOR

摘要

Provided is a pressure sensor wherein both pressure characteristics and temperature characteristics are improved compared with conventional pressure sensors. Bridge-connected piezo elements (B-E) are formed on a surface of a diaphragm (3) with a P+ type semiconductor layer. On the both ends of each piezo element, a pair of P++ type wiring layers (25, 26) are connected. At least a part of the P++ wiring layers (25, 26) is formed to extend on the surface of the diaphragm (3). In a fixed region (4), a first adjusting resistor (28), which is connected in series to each piezo element for adjusting bridge resistance, and a second adjusting resistor (30) for adjusting bridge resistance are formed. The second adjusting resistor (30) is connected in series to a second piezo element (C) and a third piezo element (D) whose resistance values increase when the diaphragm (3) is distorted.