| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve heat dissipation of an airtight terminal for a semiconductor device. <P>SOLUTION: Disclosed is the airtight terminal 7 for the semiconductor device, wherein a base 1 and a heat sink 5 are integrally formed by copper or copper-based alloy. The airtight terminal is characterized in that: even when the heat sink 5 decreases in hardness owing to heating up to plastic deformation range temperature during sealing with sealing glass 3, the hardness of a wire bonding scheduled portion can be increased by punching the wire bonding scheduled portion in a plane shape to form coining 8; and the heat dissipation can be improved without impairing bondability. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
