| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces leakage current while increasing capacitance. SOLUTION: The semiconductor device has: (A) a conductive layer; (B) a silicon substrate; and (C) a dielectric layer formed between the conductive layer and the silicon substrate, wherein the dielectric layer (C) includes (C1) a layer of silicon oxide (SiO<SB>x≤2</SB>) having a dielectric constant of 3.9 or greater and 12 or smaller, and (C2) a complementary dielectric layer arranged on the silicon oxide layer. COPYRIGHT: (C)2009,JPO&INPIT
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