| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which easily reduces the chip size and also suppresses the transfer of electrons from the forming region of an output transistor to the forming region of other elements, with high effectiveness. SOLUTION: An active barrier structure comprises p-type regions PE, PR2 and PR3, and n-type regions NE, EP and NR1 connected to a p-type impurity region PSR, respectively and also subjected to ohmic connection so as to be mutually a floating potential. A trench isolation structure TI is formed, between an active barrier region ABR and other region (output transistor forming region ER and control circuit forming region CCR). The trench isolation structure TI includes a trench TR, which passes through an n<SP>-</SP>epitaxial layer EP from the main surface of a semiconductor substrate SUB and reaches the p-type impurity region PSR. COPYRIGHT: (C)2009,JPO&INPIT
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