METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is not limited by the concentration of a diffusion layer and of which junction leak current is reduced enough. SOLUTION: The method of manufacturing a semiconductor device includes: a step to dope an area of first conductivity type of a silicon substrate with impurities of second conductivity type opposite to first conductivity type and heat it so as to form a diffusion layer of the second conductivity type; and a step to implant nitride or fluorine ions to the diffusion layer and give a carbon dioxide gas laser to the diffusion layer. COPYRIGHT: (C)2009,JPO&INPIT