| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device having improved reliability in a write-in property by attaining an optimized adjustment of the write-in voltage for each even block and each odd block. <P>SOLUTION: The semiconductor storage device is equipped with: a memory cell array 11 equipped with the even block (Even Blk) including a memory cell unit MU and first, second selection transistors S1, S2 and the odd block (Odd Blk) arranged adjacent to the even block while putting a contact wiring DC in between and equipped with a memory cell unit MU and third, fourth selection transistors S3, S4; a storage circuit 20; and a state machine 18. The state machine applies the offset write-in voltage to word lines WL arranged adjacent to the first, third selection transistors and having same numbers assigned thereto and to word lines WL31 arranged adjacent to the second, fourth selection transistors and having same numbers assigned thereto, by the offset data read out from the storage circuit. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
