| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing device of a processing sample for allowing high speed and accurate etching, and to provide a production method of thin-film samples. SOLUTION: This processing device includes a holder 50, an ion gun 20, and an electron gun 10. The holder 50 has a front surface and a back surface, substantially inparallel with each other, and grips the processing sample having a thickness defined as the distance of the front surface and back surface. The ion gun 20 emits argon ions and irradiates argon ions to the back surface of the processing sample gripped by the holder 50. The electron gun 10 emits electrons and is constituted so as to irradiate the electrons to the front surface of the processing sample gripped by the holder 50. A microcomputer 30 controls the current density of the argon ions emitted by the ion gun 20, based on the current density of transmitted electrons measured by a current detector 40. COPYRIGHT: (C)2009,JPO&INPIT
|
