| 摘要 |
<p>The inventive method for producing a diffraction grating of single-crystalsof metals, alloys thereof and semiconductors on a sheet material involves impregnating a sheet material with the salt solution of a material to be crystallised and subsequently exposing said material to the action of a pulse laser radiation which forms from lines an interference pattern on the sheet material, during the pulse time, and interacts with the solution along said lines. Furthermore, a low-temperature plasma occurs at each point of the lines and forms, in the area of the existence thereof, a gas medium in which the material contained in the solution is recovered to a pure material owing to the crystallisation thereof on a liquid substrate during the plasma cooling. As a consequence of the described process, a diffraction grating is made of single-crystals of metals, alloys thereof and semiconductors along the lines of the interference pattern. The crystallisation of the material introduced into the solution will not take place beyond the lines of the interference pattern due to the short time of the laser radiation pulse (order of 10 ns), since such a short pulse excludes heat distribution beyond said lines. The period of the interference pattern lines is not in any defined interrelation with the period of the crystal lattice of the materials introduced into the solution. The device for carrying out said method makes it possible to produce a diffraction grating of single-crystals of metals, alloys thereof and semiconductors on a sheet material in a natural medium.</p> |
