SEMICONDUCTOR LASER HAVING ABSORPTION LAYER

摘要

The invention relates to a semiconductor laser, which has an active zone (1) comprising optionally doped semiconductor layers for the generation of electromagnetic radiation following electric excitation, said zone being surrounded in four spatial directions by waveguide layers (2a, 2b, 5a, 5b), optionally a substrate (3), and in each case at least one power supply and removal element (4) for excitation of photon formation in the semiconductor layers, some waveguide layers (5a, 5b) optionally forming insulating layers between the active zone (1) and the power supply element (4), and characterized in that at least part of at least one waveguide layer (2a, 2b, 5a, 5b) is in contact with an absorption layer (6) interacting with the electromagnetic radiation, said absorption layer comprising inorganic and/or organic material, which has non-homogeneous absorbance in the emission wavelength range of the laser and preferably has a lower effective refractive index than the active zone (1), or is made of said material.