发明名称 |
METHOD FOR LIMITING CHANGE OF ELECTRIC CURRENT FLOWING BETWEEN PLASMA CHAMBER AND POWER SUPPLY, CURRENT CHANGE RATE LIMITING DEVICE PREPARED BETWEEN PLASMA CHAMBER AND POWER SUPPLY FOR LIMITING CHANGE OF ELECTRIC CURRENT FLOWING BETWEEN PLASMA CHAMBER AND POWER SUPPLY, AND CURRENT CHANGE RATE LIMITING CIRCUIT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a device capable of controlling electric current flowing between a plasma chamber and a power supply. <P>SOLUTION: The current change rate limiting device 20 prepared at a current path between the power supply 2 and the plasma chamber 3 for limiting a current change rate di/dt of an electric current Iout flowing between the plasma chamber 3 and the power supply 2 includes a non-linear device and an inductor L, and the L is pre-charged by being supplied with DC current. In addition, a current sensor 28 measures the current between the plasma chamber 3 and the power supply 2. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009176726(A) |
申请公布日期 |
2009.08.06 |
申请号 |
JP20080322654 |
申请日期 |
2008.12.18 |
申请人 |
HUETTINGER ELECTRONIC SP Z OO |
发明人 |
KLIMCZAK ANDRZEJ;RAFAL BUGYI;PAWEL OZIMEK |
分类号 |
H05H1/46;H05H1/00;H05H1/24 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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