| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high quality insulating film in which a defect is hard to occur, and to reduce leakage current. <P>SOLUTION: A manufacturing method of a semiconductor device includes a step of forming an amorphous silicon layer on an insulating layer 2, a step of introducing oxygen to the amorphous silicon layer, and a step of forming a silicon oxynitride layer 3. <P>COPYRIGHT: (C)2009,JPO&INPIT |
