| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique of a manufacturing method of a semiconductor crystal thin film obtaining an inexpensive, high-quality and low-defect semiconductor crystal thin film with a small quantity of high-purity melt material. <P>SOLUTION: A semiconductor melt formed of Si, Ge or SiGe is kept at a temperature above a melting point of Si, Ge or SiGe; and a predetermined quantity is dripped from the melt on a principal surface of a substrate formed of any of a single crystal, a polycrystal and a porous crystal of Si, Ge or SiGe to carry out epitaxial growth to form a thin film of a Si, Ge or SiGe crystal on the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
