| 摘要 |
<p>A resistance nonvolatile memory element having a MIM multilayer structure of metal/resistivity-varying material (transition metal oxide)/metal. The element constitutes a resistance nonvolatile semiconductor memory device. The memory device is such that the current flowing when the element is reset is small and the ratio of the resistivity in a set state to that in a reset state is high. A method for manufacturing such a device is also disclosed. The resistance nonvolatile semiconductor memory device having a multilayer structure composed of an upper electrode (1), a resistivity-varying material (2), and a lower electrode (3) includes an insulating film (6) in contact with the resistivity-varying material (2) and a reset electrode (7) in contact with the insulating film and out of contact with the upper and lower electrodes. When a voltage is applied to the reset electrode (7), the MIM element is reset. Nickel oxide is used as the resistivity-varying material. The composition is denoted by NiXO1-X (0<X<1) and X is in the range of 0.43. Thus, while reducing the current flowing when the element is reset, a low resistivity in a set state and a high one in a reset state are achieved. Therefore, a low reset current and a high ratio between the resistivities in set and reset states are realized.</p> |
