| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a gallium nitride compound semiconductor having high quality and low dislocation by controlling the polarity of a nitride gallium compound semiconductor growing on a substrate of a diboride single crystal. <P>SOLUTION: The gallium nitride compound semiconductor which is formed on the main surface of a single crystal substrate 10 composed of XB<SB>2</SB>(wherein X is one or more kinds of element selected from Zr, Ti and Hf), has a Ga<SB>1-x-y</SB>Al<SB>x</SB>In<SB>y</SB>N single crystal layer (wherein 0<x+y≤1, 0≤y<0.1) 11 formed on the main surface of the single crystal layer 10; and a nitride gallium compound semiconductor layer 12 formed thereon and having Ga polarity. <P>COPYRIGHT: (C)2009,JPO&INPIT |
