| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field effect transistor which has a large on-off ratio and is superior in the environmental stability of storage in the atmosphere by using an amorphous oxide comprising a small number of elements. <P>SOLUTION: The field effect transistor is constituted, by at least forming a channel layer, a gate insulating layer, a source electrode, a drain electrode and a gate electrode on a substrate; the channel layer comprises an amorphous oxide material including at least In and B; and the element ratio B/(In+B) of the amorphous oxide material is 0.05 or higher and 0.29 or lower. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
