| 摘要 |
PROBLEM TO BE SOLVED: To form an insulation film suitable for use as a high-dielectric-constant gate insulation film and including a high-dielectric-constant metal nitride silicate film. SOLUTION: A method for forming insulation films includes: a first process for depositing a film 102 containing metal and silicon on a silicon substrate 101 using a sputtering method in an atmosphere that it is difficult for metal atoms and silicon atoms to have an oxidization reaction, a second process for forming a film 103 containing nitrogen, metal and silicon by nitriding the film 102 using nitrogen plasma, and a third process for forming a metal nitride silicate film 104 by oxidizing the film 103 using oxygen plasma. During a period from completion of the first process to start of the second process, the film 102 is retained in the atmosphere where oxidation reaction is hardly caused. In the third process, the surface layer portion of the silicon substrate 101 under the film 104 is oxidized to form a silicon dioxide film 105. The metal includes at least either one of hafnium and zirconium. COPYRIGHT: (C)2009,JPO&INPIT
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