| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor that controls dark current as well as controlling spreading of elements in an upper layer to improve reliability of a photodiode and transistor. SOLUTION: The solid-state image sensor 20 is constructed such that it has a semiconductor layer 1 on which a photodiode 2 and a positive charge storage region 3 are formed, a first insulating film 4 formed on it, and a second insulating film 5 formed on its top and having a negative fixed charge. The first and second insulating films 4 and 5 are formed in that region 2 on the semiconductor layer 1 in which the photodiode is formed, and the first insulating film 4 controls the spreading of elements of the second insulating film 5. COPYRIGHT: (C)2009,JPO&INPIT
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