SUBSTRATE PROCESSING APPARATUS, MEMBER FOR HEAT TREATMENT AND METHOD OF MANUFACTURING MEMBER FOR HEAT TREATMENT

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus less likely to contaminate a substrate by metal elements externally diffusing from the surface of a member made of a silicon carbide provided inside a region for processing a substrate, and to provide a member for heat treatment and a method of manufacturing the member for heat treatment. SOLUTION: A heat treatment apparatus 10 has a support 30 which is the member made of the silicon carbide inside the region for processing the substrate 54. The support 30 is composed by changing a surface to a silicon oxide film 30d by oxidation and then removing the silicon oxide film 30d. The oxidation is executed under such a condition that the oxidation speed of the support 30 is higher than the diffusing speed inside the support 30 of the metal element included in the support 30. COPYRIGHT: (C)2009,JPO&INPIT